產品資訊

光電感測器 Ge Photodiodes

DETAIL
  • Dimensional drawing


 
  • Specifications

No. GM10HSBNC Type: photodiode
PKG. *BNC MAT. Ge
Device marking
(a) G
(b) GM10HSBNC
(c) DC
Group A and/0r performance characteristics
No. Symbol Conditions @23ºc±2ºc Min. Max. Units
1 RD @ 850 nm 0.18 (Typ.) 0.20 A/W
2 @ 1300 nm 0.65 (Typ.) 0.70 A/W
3 @ 1550 nm 0.75 (Typ.) 0.85 A/W
4 R(SH) @ VR = 10 mV 2.0 (Typ.) 5 KW
5 ID @ VR = 0.5 V (Typ.) 50 70 mA
6 CT @ VR = 1.0 V 30,000 pF
7
8
9
10 Maximum Ratings
11 IR 10 mA
12 IF 10 mA
13 PT 50 mW
14 T(stg) -40 +125 ºC
15 T(op) -40 +85 ºC
Special requirements
*BNC Housing, AR Coated Sapphire Window Cap.
*Outline Drawing# 30-021 
Active Size 10mm²
Max VR 1.0V