產品資訊

光電感測器 Ge Photodiodes

DETAIL
  • Dimensional drawing


 
  • Specifications

No. GM8HS-1 Type: photodiode
PKG. *TO-8 MAT. Ge
Device marking
(a) G
(b) GM8HS-1 RED DOT (ANODE)
(c) DC
Group A and/0r performance characteristics
No. Symbol Conditions @23ºc±2ºc Min. Max. Units
1 RD @ 850 nm .20 (Typ.) 0.22 A/W
2 @ 1300 nm .65 (Typ.) 0.72 A/W
3 @ 1550 nm .75 (Typ.) 0.85 A/W
4 R(SH) @ VR = 10 mV 2.0 (Typ.) 15 KW
5 ID @ VR = 1.0 V (Typ.) 10 15 mA
6 CT @ VR = 3.0 V 6,000 pF
7 NEP @ 1550 nm 2 pWHZ
8 BW 50W, -3dB, 3V 0.5 MHZ
9
10
11
12 Maximum Ratings
13 V 3 V
14 IR 10 mA
15 IF 10 mA
PT 100 mW
T(stg) -40 100 ºC
T(op) -40 85 ºC
Special requirements
*TO-8 Package, Window Cap
*Outline Drawing#13726
Active Dia. 5 mm