光電感測器 InGaAs Photodiodes

Standard(標準型) InGaAs Photodiodes

DETAIL

Reliable NIR Performance

The standard InGaAs photodiodes provide reliable, low-noise detection across the near-infrared spectrum. Designed for precision measurement, they convert NIR light into stable electrical signals with high sensitivity, supporting wavelengths from approximately 850 nm to 1700 nm, with extended options available for longer ranges.

The product family includes both small- and large-area photodiodes to address different performance requirements.

Small- and Large-Area Standard InGaAs Photodiodes

Small-area InGaAs Photodiodes offer fast response and low capacitance, making them well-suited for high-speed measurements.
Large-area InGaAs Photodiodes capture more light, enabling higher sensitivity and better performance with larger beam sizes.

A variety of package styles, window options, and cooling configurations allow each device to be tailored to specific applications. These photodiodes are commonly used in NIR sensing, spectroscopy, laser and LED characterization, medical instrumentation, and telecom and datacom monitoring. Clear performance specifications enable engineers to easily compare models and select the optimal balance of speed, sensitivity, and active area for their systems.

Features
Chip active diameters from 100 μm to 10 mm
Spectral response from 850 nm to 1700 nm, available with photodiodes up to 2600 nm
High shunt resistance for high sensitivity
Multiple lens and window options
Thermoelectric cooling options

Applications
NIR Sensing/Radiometry
LED/LD Characterization
Spectroscopy
Medical Diagnostics
Telcom/Datacom Power Monitor

Products

Opto/Electronic Characteristics @ 23 ºC ± 2 ºC
Part Number	Spectral response range	Photosensitive area	Responsivity @ 1.55im (min./max.)	Capacitance @ 0V (max.)	Capacitance @ 5V_R (max.)	Dark Current @ V_R (typ./max.)	Package Category
N17S10-XX	0.8 to 1.7µm	100µm	0.93/1.1 A/W	1.9pF	1.2pF	0.05/1 @ 5V	TO-46, TO-18, LCC-4
N17S15-XX	0.8 to 1.7µm	150µm	0.93/1.1 A/W	2.4pF	1.8pF	0.1/1 @ 5V	TO-46, TO-18, LCC-4
N17S30-XX	0.8 to 1.7µm	300µm	0.93/1.1 A/W	25pF	8.0pF	0.5/5 @ 5V	TO-46, TO-18, LCC-4
N17S50-XX	0.8 to 1.7µm	500µm	0.93/1.1 A/W	40pF	18pF	0.8/5 @ 5V	TO-46, TO-18, LCC-4
N17S100-XX	0.8 to 1.7µm	1.0mm	0.93/1.1 A/W	250pF	110pF	1/8 @ 5V	TO-46, TO-18, LCC-6
N17S150-XX	0.8 to 1.7µm	1.5mm	0.93/1.1 A/W	375pF	250pF	0.8/10 @ 1V	TO-5, LCC-6
N17S200-XX	0.8 to 1.7µm	2.0mm	0.93/1.1 A/W	800pF	300pF	3/10 @ 2V	TO-5, LCC-6
N17L200-XX*	0.8 to 1.7µm	2.0mm	0.93/1.1 A/W	500pF	200pF	3/10 @ 2V	TO-5, LCC-6
N17S300-XX	0.8 to 1.7µm	3.0mm	0.93/1.1 A/W	1600pF	700pF	5/15 @ 1V	TO-5, LCC-28, BNC
N17L300-XX*	0.8 to 1.7µm	3.0mm	0.93/1.1 A/W	660pF	400pF	3/15 @ 5V	TO-5, LCC-28, BNC
N17S500-XX	0.8 to 1.7µm	5.0mm	0.93/1.1 A/W	4000pF	NA	10/200 @ 0.5V	TO-8, LCC-28

*Low capacitance

Figure1-InGaAs Response vs. Wavelength vs. Temperature

Figure 2-InGaAs Response vs. Wavelength vs. Temperature (Cont.)

Figure 3-Dark Current vs. Reverse Voltage vs. Diameter

Figure 4-Capacitance (pF) vs. Reverse Voltage (V) vs. Diameter (mm)

Small Area InGaAs Photodiodes -
1.7µm cutoff wavelength 100μm-1mm dia. active areas

Packaging Capabilities

Packaging Configurations
Diameter (μm)	TO Headers		Ceramic Leadless Chip Carrier
	TO-46	TO-18	LCC-6
100	●	●
150	●	●
300	●	●
500	●	●	●
1000	●	●	●
Window (Other Options Available)
Material	Molded Clear Glass		Borosilicate Glass
Thickness (mm)	0.25		0.5

Package Outlines

TO-46

TO-18

LCC-6

Large Area InGaAs Photodiodes -
1.7µm cutoff wavelength 1-5 mm dia. active areas

Packaging Capabilities

Packaging Configurations
Diameter (mm)	TO Headers				Ceramic Leadless Chip Carrier
	TO-46	TO-18	TO-5	TO-8	LCC-6	LCC-28	BNC
1	●	●	●		●
1.5	●	●	●		●
2			●		●
3			●			●	●
5			●	●		●	●
Window (Other Options Available)
Material	Molded Clear Glass				Borosilicate Glass
Thickness (mm)	0.25				0.5