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光電感測器 Avalanche Photodiodes

InGaAs Avalanche Photodiodes (APDs)

InGaAs Avalanche Photodiodes (APDs)

DETAIL
InGaAs avalanche photodiodes are used when greater sensitivity is needed than standard photodiodes can provide. These devices employ an internal gain mechanism in which impact ionization generates secondary electrons, triggering an electron avalanche that amplifies the original optical signal. This internal amplification enables reliable measurement of very weak signals. InGaAs APDs are commonly used in applications such as LiDAR, optical communications, and other systems where signal levels are extremely low.
 
 

  • Features

  • Chip active diameters from 80 μm to 350 μm
  • Spectral response from 900 nm to 1650 nm
  • Linear operation
  • Low dark current for high sensitivity
  • Low capacitance for high speed
  • Fiber pigtail available (single-mode or multi-mode)
  • Package flexibility (TO packages and ceramic submounts, with ball lens option)

 

  • Applications

  • LiDAR
  • Free space optics
  • High-sensitivity photometry
  • Optical time domain reflectometer (OTDR)
  • Optical communication

  • Specifications

    Part Number IAV008-T46 IAV020-T46 IAV035-T46 Units
    Optoelectronic Characteristics @ 23 ºC ± 2 ºC
    Active Diameter 80 200 350 μm
    Spectral Response Range 1.0-1.63 1.0-1.63 1.0-1.63 μm
    Responsivity @ M=1 @ 1.55μm (min/typ/max) 0.85/0.90/0.95 0.85/0.94/1.05 0.85/0.90/0.95 A/W
    IDARK@ M=10 (typ/max) 4/15 8/25 30/250 nA
    Operating Voltage, VR @ M=10 (min/typ/max) 43/55/70 43/55/70 37/52/68 V
    Breakdown Voltage, VBR (Id=10μA) (min/typ/max) 40/65/80 50/63/75 45/60/75 V
    Capacitance @ M=10 (typ/max) 0.38/0.45 1.8/2.2 3.2/4.0 pF
    VBR temperture coefficient (typ) 0.06 0.075 0.075 V/oC
    Bandwidth @ M=5 (typ) 2.5 1.5 0.6 GHz
    Bandwidth @ M=10 (typ) 1.5 1.5 0.6 GHz
    Bandwidth @ M=20 (typ) 2.2 1 0.6 GHz
    Excess Noise Factor, F @ M=10 (typ/max) 3.2/3.7 3.2/3.7 3.2/3.7
    Excess Noise Factor, F @ M=20 (typ/max) 5.5/6.0 5.5/6.0 5.5/6.0
    Noise Equivalent Power @ M=10 (typ/max) 10/40 32/100 80/100 fW/Hz1/2
    Package TO-46 window cap TO-46 window cap TO-46 window cap
    Maximum Ratings @ 23 °C ± 2 °C
    Storage Temperture -40 to 85 -40 to 85 -40 to 85 oC
    Operating Temperture -40 to 70 -40 to 70 -40 to 70 oC
    Reverse Current 1 1 1 mA
    Forward Current 10 10 10 mA
    Optical Input Density (10ns pulse width) 200 200 200 kW/cm2
    Optical Input (ave) 1 1 1 mW
 
InGaAs APD Spectral Response @ M=10 @ 1.55μm

 

  • Packaging Capabilities 

Packaging Configurations Options
Part number Diameter TO-46 Header Ceramic Submount Ceramic Package Ceramic Wrap Around
2 pin 3 pin
IAV008-T46 80μm ● ●
IAV020-T46 200μm ● ● ●
IAV035-T46 350μm ● ● ● ●
Window (Other Options Available)
Molder Clear Glass Ball Lens AR Coated Ball Lens Single Mode Fiber Aperture Cap
 

  • Package Outlines

 

 
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